发明申请
- 专利标题： Methods of manufacturing metal-silicide features
- 专利标题（中）： 金属硅化物的制造方法
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申请号： US10872343申请日： 2004-06-18
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公开(公告)号： US20050280118A1公开(公告)日： 2005-12-22
- 发明人: Chen-Tung Lin , Chih-Wei Chang , Chii-Ming Wu , Mei-Yun Wang , Chiang-Ming Chuang , Shau-Lin Shue
- 申请人： Chen-Tung Lin , Chih-Wei Chang , Chii-Ming Wu , Mei-Yun Wang , Chiang-Ming Chuang , Shau-Lin Shue
- 申请人地址： TW Hsin-Chu 300-77
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu 300-77
- 主分类号： C30B1/00
- IPC分类号： C30B1/00 ; H01L21/20 ; H01L21/28 ; H01L21/285 ; H01L21/321 ; H01L21/336 ; H01L21/36 ; H01L21/768 ; H01L23/485 ; H01L29/06
摘要：
A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the semi-conductive layer. At least a portion of the semi-conductive layer is doped by implanting through the conductive layer. The semi-conductive layer and the conductive layer may then be annealed.
公开/授权文献
- US07268065B2 Methods of manufacturing metal-silicide features 公开/授权日：2007-09-11
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