发明申请
- 专利标题： Deposition apparatus for providing uniform low-k dielectric
- 专利标题（中）： 用于提供均匀的低k电介质的沉积装置
-
申请号： US10881095申请日： 2004-06-29
-
公开(公告)号： US20050284371A1公开(公告)日： 2005-12-29
- 发明人: Robert McFadden , Shurong Liang , Vitaly Kasperovich , Mandyam Sriram
- 申请人： Robert McFadden , Shurong Liang , Vitaly Kasperovich , Mandyam Sriram
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23C16/458 ; C23C16/509 ; H01L21/687
摘要：
Improvements in a PECVD chamber to provide better uniformity in film thickness and mechanical strength are described. Less contact surface is provided to the outer edge of the wafer and non-uniform gas distribution occurs through adjustments to the gas distribution plate to provide this uniformity.
信息查询
IPC分类:
