-
公开(公告)号:US20050284371A1
公开(公告)日:2005-12-29
申请号:US10881095
申请日:2004-06-29
IPC分类号: C23C16/00 , C23C16/458 , C23C16/509 , H01L21/687
CPC分类号: H01L21/6875 , C23C16/401 , C23C16/455 , C23C16/45565 , C23C16/458 , C23C16/4583 , C23C16/5096
摘要: Improvements in a PECVD chamber to provide better uniformity in film thickness and mechanical strength are described. Less contact surface is provided to the outer edge of the wafer and non-uniform gas distribution occurs through adjustments to the gas distribution plate to provide this uniformity.
摘要翻译: 描述了PECVD室的改进以提供更好的膜厚度和机械强度的均匀性。 较小的接触表面被提供到晶片的外边缘,并且通过调节气体分配板而发生不均匀的气体分布,以提供这种均匀性。
-
公开(公告)号:US06610615B1
公开(公告)日:2003-08-26
申请号:US09714001
申请日:2000-11-15
申请人: Robert McFadden , Jack Kavalieros , Reza Arghavani , Doug Barlage , Robert Chau
发明人: Robert McFadden , Jack Kavalieros , Reza Arghavani , Doug Barlage , Robert Chau
IPC分类号: H01L2131
CPC分类号: H01L21/28202 , H01L21/3144 , H01L29/518
摘要: A method of forming a dielectric layer suitable for use as the gate dielectric layer in a MOSFET includes nitridizing a thin silicon oxide film in a low power, direct plasma formed from nitrogen. A gas having a lower ionization energy than nitrogen, such as for example, helium, may be used in combination with nitrogen to produce a lower power plasma resulting in a steeper concentration curve for nitrogen in the silicon oxide film.
-
公开(公告)号:US20050104773A1
公开(公告)日:2005-05-19
申请号:US10867643
申请日:2004-06-16
申请人: Christopher Clarke , Robert McFadden , Shannon Lal
发明人: Christopher Clarke , Robert McFadden , Shannon Lal
摘要: A detection system and method having at least one detection unit, and a control centre unit. The detection unit includes at least one sensor configured to generate sensor data correlated to sensed conditions, a locator for actively determining location data corresponding to the location of the detection unit, and a communicator configured to communicate the sensor data and location data. The control centre includes a receiver for receiving the sensor data and the location data, together with a control processor which is configured to determine a threat level correlated to the sensor data.
摘要翻译: 一种具有至少一个检测单元和控制中心单元的检测系统和方法。 所述检测单元包括至少一个传感器,所述至少一个传感器被配置为产生与感测到的条件相关的传感器数据,用于主动地确定与所述检测单元的位置相对应的位置数据的定位器,以及被配置为传送所述传感器数据和位置数据的通 控制中心包括用于接收传感器数据和位置数据的接收器以及被配置为确定与传感器数据相关的威胁级别的控制处理器。
-
公开(公告)号:US06667251B2
公开(公告)日:2003-12-23
申请号:US10460498
申请日:2003-06-11
申请人: Robert McFadden , Jack Kavalieros , Reza Arghavani , Doug Barlage , Robert Chau
发明人: Robert McFadden , Jack Kavalieros , Reza Arghavani , Doug Barlage , Robert Chau
IPC分类号: H01L2131
CPC分类号: H01L21/28202 , H01L21/3144 , H01L29/518
摘要: A method of forming a dielectric layer suitable for use as the gate dielectric layer in a MOSFET includes nitridizing a thin silicon oxide film in a low power, direct plasma formed from nitrogen. A gas having a lower ionization energy than nitrogen, such as for example, helium, may be used in combination with nitrogen to produce a lower power plasma resulting in a steeper concentration curve for nitrogen in the silicon oxide film.
摘要翻译: 形成适合用作MOSFET中的栅极电介质层的电介质层的方法包括:在由氮形成的低功率直接等离子体中氮化薄氧化硅膜。 具有比氮更低的电离能(例如氦)的气体可以与氮组合使用以产生较低功率的等离子体,导致氧化硅膜中氮的浓度曲线更陡。
-
公开(公告)号:US20070222675A1
公开(公告)日:2007-09-27
申请号:US11669588
申请日:2007-01-31
申请人: Robert McFadden , Christopher Clarke , Shannon Lal
发明人: Robert McFadden , Christopher Clarke , Shannon Lal
IPC分类号: G01S5/14
摘要: A detection system and method having at least one detection unit, and a control centre unit. The detection unit includes at least one sensor configured to generate sensor data correlated to sensed conditions, a locator for actively determining location data corresponding to the location of the detection unit, and a communicator configured to communicate the sensor data and location data. The control centre includes a receiver for receiving the sensor data and the location data, together with a control processor which is configured to determine a threat level correlated to the sensor data.
摘要翻译: 一种具有至少一个检测单元和控制中心单元的检测系统和方法。 所述检测单元包括至少一个传感器,所述至少一个传感器被配置为产生与感测到的条件相关的传感器数据,用于主动地确定与所述检测单元的位置相对应的位置数据的定位器,以及被配置为传送所述传感器数据和位置数据的通 控制中心包括用于接收传感器数据和位置数据的接收器以及被配置为确定与传感器数据相关的威胁级别的控制处理器。
-
-
-
-