发明申请
US20060027809A1 Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
审中-公开
包含半导体薄膜的半导体薄膜，其经受热处理以具有对准标记，用于半导体薄膜的结晶方法和用于半导体薄膜的结晶装置
- 专利标题： Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
- 专利标题（中）： 包含半导体薄膜的半导体薄膜，其经受热处理以具有对准标记，用于半导体薄膜的结晶方法和用于半导体薄膜的结晶装置
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申请号： US11194607申请日： 2005-08-02
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公开(公告)号： US20060027809A1公开(公告)日： 2006-02-09
- 发明人: Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
- 申请人： Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
- 优先权： JP2004-232745 20040809; JP2004-232750 20040809
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L23/544 ; H01L29/04
摘要：
Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.