发明申请
- 专利标题： Differentially metal doped copper damascenes
- 专利标题（中）： 差异化金属掺杂铜大马士革
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申请号： US10977596申请日： 2004-10-29
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公开(公告)号： US20060091551A1公开(公告)日： 2006-05-04
- 发明人: Chun-Chieh Lin , Shih-Wei Chou , Minghsing Tsai
- 申请人： Chun-Chieh Lin , Shih-Wei Chou , Minghsing Tsai
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/4763
摘要：
A method of forming a copper filled semiconductor feature having improved bulk properties including providing a semiconductor process wafer having a process surface including an opening for forming a semiconductor feature; depositing at least one metal dopant containing layer over the opening to form a thermally diffusive relationship to a subsequently deposited copper layer; depositing said copper layer to substantially fill the opening; and, thermally treating the semiconductor process wafer for a time period sufficient to distribute at least a portion of the metal dopants to collect along at least a portion of the periphery of said copper layer including a portion of said copper layer grain boundaries.
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