发明申请
US20060113627A1 High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage
有权
具有用于防止泄漏并改善击穿电压的层间电介质蚀刻停止层的高压晶体管器件
- 专利标题： High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage
- 专利标题（中）： 具有用于防止泄漏并改善击穿电压的层间电介质蚀刻停止层的高压晶体管器件
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申请号： US10999508申请日： 2004-11-29
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公开(公告)号： US20060113627A1公开(公告)日： 2006-06-01
- 发明人: Chung-I Chen , Hsin Kuan , Zhi-Cheng Chen , Rann-Shyan Yeh , Chi-Hsuen Chang , Jun Liu , Tzu-Chiang Sung , Chia-Wei Liu , Jieh-Ting Chang
- 申请人： Chung-I Chen , Hsin Kuan , Zhi-Cheng Chen , Rann-Shyan Yeh , Chi-Hsuen Chang , Jun Liu , Tzu-Chiang Sung , Chia-Wei Liu , Jieh-Ting Chang
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having a resistivity greater than 10 ohm-cm, thus leakage is prevented and breakdown voltage is improved when driving a high voltage greater than 5V at the gate site. A method for fabricating the high-voltage device is compatible with current low-voltage device processes and middle-voltage device processes.