发明申请
US20060124594A1 Chemical mechanical polishing (CMP) slurries and CMP methods using and making the same
审中-公开
化学机械抛光（CMP）浆料和CMP方法使用和制造相同
- 专利标题： Chemical mechanical polishing (CMP) slurries and CMP methods using and making the same
- 专利标题（中）： 化学机械抛光（CMP）浆料和CMP方法使用和制造相同
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申请号： US11287361申请日： 2005-11-28
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公开(公告)号： US20060124594A1公开(公告)日： 2006-06-15
- 发明人: Jong-heun Lim , Jae-dong Lee , Bo-un Yoon , Chang-ki Hong
- 申请人： Jong-heun Lim , Jae-dong Lee , Bo-un Yoon , Chang-ki Hong
- 优先权： KR10-2004-0103634 20041209
- 主分类号： C09K3/14
- IPC分类号： C09K3/14 ; C09G1/02 ; C09K13/00 ; B44C1/22 ; C23F1/00 ; C09C1/68 ; B24D3/02
摘要：
In one aspect, a chemical-mechanical-polishing (CMP) slurry composition is provided which includes ceria abrasive contained in a solution, where the solution includes a viscosity increasing agent which includes a non-ionic polymer compound, and where a viscosity of the composition is at least 1.5 cP. In other aspects, the viscosity increasing agent includes one or more of poly(ethyleneglycol), a Gum compound and isopropyl alcohol.
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