发明申请
US20060177997A1 Methods of forming semiconductor devices with high-k gate dielectric
有权
用高k栅极电介质形成半导体器件的方法
- 专利标题： Methods of forming semiconductor devices with high-k gate dielectric
- 专利标题（中）： 用高k栅极电介质形成半导体器件的方法
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申请号： US11377105申请日： 2006-03-16
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公开(公告)号： US20060177997A1公开(公告)日： 2006-08-10
- 发明人: Chun-Chieh Lin , Wen-Chin Lee , Chenming Hu , Shang-Chih Chen , Chih-Hao Wang , Fu-Liang Yang , Yee-Chia Yeo
- 申请人： Chun-Chieh Lin , Wen-Chin Lee , Chenming Hu , Shang-Chih Chen , Chih-Hao Wang , Fu-Liang Yang , Yee-Chia Yeo
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method of fabricating an integrated circuit is provided. A first gate dielectric portion is formed on a substrate in a first transistor region. The first gate dielectric portion includes a first high-permittivity dielectric material. The first gate dielectric portion has a first equivalent silicon oxide thickness. A second gate dielectric portion is formed on the substrate in a second transistor region. The second gate dielectric portion includes the first high-permittivity dielectric material. The second gate dielectric portion has a second equivalent silicon oxide thickness. The second equivalent silicon oxide thickness is different than the first equivalent silicon oxide thickness.
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