发明申请
- 专利标题: Plasma treating apparatus and its electrode structure
- 专利标题(中): 等离子体处理装置及其电极结构
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申请号: US10565004申请日: 2004-07-22
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公开(公告)号: US20060185594A1公开(公告)日: 2006-08-24
- 发明人: Tsuyoshi Uehara , Takayuki Ono , Hitoshi Sezukuri , Hiroto Takeuchi , Hiromi Komiya , Takumi Ito , Takae Ohta
- 申请人: Tsuyoshi Uehara , Takayuki Ono , Hitoshi Sezukuri , Hiroto Takeuchi , Hiromi Komiya , Takumi Ito , Takae Ohta
- 优先权: JP2003-278536 20030723; JP2003-278537 20030723; JP2003-342195 20030930; JP2003-385691 20031114; JP2004-080166 20040319; JP2004-080167 20040319; JP2004-214182 20040722; JP2004-214183 20040722
- 国际申请: PCT/JP04/10415 WO 20040722
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
[PROBLEM TO BE SOLVED]To reduce the bending amount caused by Coulomb force of electrodes and obtain uniformity of surface processing in a plasma processing apparatus for a workpiece having a large area. [SOLUTION MEANS]An electrode structure 30X of a plasma processing apparatus comprises a pair of electrode rows 31X, 32X extending leftward and rightward and opposite to each other in back and forth directions. Each electrode row includes a plurality of electrode members 31A through 32C bilaterally arranged in a side-by-side relation. The electrode members of the two electrode rows, which are bilaterally arranged in substantially same positions, have opposite polarities and form row-to-row partial gaps 33p therebetween. The electrode members arranged adjacent to each other are opposite in polarity with respect to each other.
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