- 专利标题: Uniform current distribution for ECP loading of wafers
-
申请号: US11119183申请日: 2005-04-28
-
公开(公告)号: US20060243596A1公开(公告)日: 2006-11-02
- 发明人: Ming-Wei Lin , Ming-Hsing Tsai
- 申请人: Ming-Wei Lin , Ming-Hsing Tsai
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号: C25D7/12
- IPC分类号: C25D7/12 ; C25D17/06
摘要:
An electrochemical plating apparatus and method for facilitating uniform current distribution across a wafer during loading into an ECP (electrochemical plating) apparatus is disclosed. The apparatus includes a bath container for containing a bath solution, an anode provided in the bath container, a cathode ring for supporting a wafer in the bath container and a current source electrically connected to the anode and the cathode ring. According to the method, a voltage potential is applied to the cathode ring as it is immersed into the solution and prior to immersion of the wafer in the solution, thereby facilitating a substantially uniform plating current across the wafer upon immersion of the wafer.
公开/授权文献
- US07544281B2 Uniform current distribution for ECP loading of wafers 公开/授权日:2009-06-09
信息查询