发明申请
US20060281289A1 Method of forming polycide layer and method of manufacturing semiconductor device having polycide layer
审中-公开
形成聚酰亚胺层的方法和制造具有多晶硅化物层的半导体器件的方法
- 专利标题: Method of forming polycide layer and method of manufacturing semiconductor device having polycide layer
- 专利标题(中): 形成聚酰亚胺层的方法和制造具有多晶硅化物层的半导体器件的方法
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申请号: US11446981申请日: 2006-06-06
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公开(公告)号: US20060281289A1公开(公告)日: 2006-12-14
- 发明人: Young-Cheon Kim , Chul Hwangbo , Rak-Hwan Kim , Hyeon-Deok Lee , In-Sun Park , Ji-Soon Park
- 申请人: Young-Cheon Kim , Chul Hwangbo , Rak-Hwan Kim , Hyeon-Deok Lee , In-Sun Park , Ji-Soon Park
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR2005-49294 20050609
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
In a method of forming a polycide layer and method of manufacturing a semiconductor device having the polycide layer, the method may include forming a preliminary polysilicon layer doped with first type impurities on a substrate having a first region and a second region, implanting second type of impurities into a portion of the preliminary polysilicon layer on the second region, heat treating the preliminary polysilicon layer to electrically activate the impurities, removing a portion of an upper surface of the heat treated preliminary polysilicon layer to obtain a polysilicon layer, forming a metal silicide layer on the polysilicon layer, and patterning the polysilicon layer and the metal silicide layer to form a first type gate electrode on the first region and to form a second type gate electrode on the second region.