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    Method of forming polycide layer and method of manufacturing semiconductor device having polycide layer
    1.
    发明申请
    Method of forming polycide layer and method of manufacturing semiconductor device having polycide layer 审中-公开
    形成聚酰亚胺层的方法和制造具有多晶硅化物层的半导体器件的方法

    公开(公告)号：US20060281289A1

    公开(公告)日：2006-12-14

    申请号：US11446981

    申请日：2006-06-06

    申请人： Young-Cheon Kim ,  Chul Hwangbo ,  Rak-Hwan Kim ,  Hyeon-Deok Lee ,  In-Sun Park ,  Ji-Soon Park

    发明人： Young-Cheon Kim ,  Chul Hwangbo ,  Rak-Hwan Kim ,  Hyeon-Deok Lee ,  In-Sun Park ,  Ji-Soon Park

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/26513 ,  H01L21/28061 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4933 ,  H01L29/6659 ,  H01L29/7833

    摘要： In a method of forming a polycide layer and method of manufacturing a semiconductor device having the polycide layer, the method may include forming a preliminary polysilicon layer doped with first type impurities on a substrate having a first region and a second region, implanting second type of impurities into a portion of the preliminary polysilicon layer on the second region, heat treating the preliminary polysilicon layer to electrically activate the impurities, removing a portion of an upper surface of the heat treated preliminary polysilicon layer to obtain a polysilicon layer, forming a metal silicide layer on the polysilicon layer, and patterning the polysilicon layer and the metal silicide layer to form a first type gate electrode on the first region and to form a second type gate electrode on the second region.

    摘要翻译： 在形成多晶硅化合物层的方法和制造具有多晶硅化物层的半导体器件的方法中，该方法可以包括在具有第一区域和第二区域的衬底上形成掺杂有第一类型杂质的初步多晶硅层， 杂质进入第二区域的初步多晶硅层的一部分，热处理初步多晶硅层以电激活杂质，去除热处理的初步多晶硅层的上表面的一部分以获得多晶硅层，形成金属硅化物 并且在所述第一区域上形成所述多晶硅层和所述金属硅化物层以形成第一类型的栅电极，并在所述第二区域上形成第二类型的栅电极。

    STORAGE CAPACITORS FOR SEMICONDUCTOR DEVICES
    4.
    发明申请
    STORAGE CAPACITORS FOR SEMICONDUCTOR DEVICES 审中-公开
    半导体器件存储电容器

    公开(公告)号：US20080185624A1

    公开(公告)日：2008-08-07

    申请号：US12100042

    申请日：2008-04-09

    申请人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    发明人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    IPC分类号： H01L29/94

    CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/75

    摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening there through on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.

    摘要翻译： 形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模制氧化物层，选择性地去除部分 模制氧化物层以在接触塞上方形成凹陷，在凹陷的底表面和侧表面上形成钛层，在钛层上形成氮化钛层，并在氮化钛层上形成氮氧化钛层。 存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物 层在氮化钛层上。

    Methods of forming storage capacitors for semiconductor devices
    6.
    发明授权
    Methods of forming storage capacitors for semiconductor devices 有权
    形成半导体器件的储存电容器的方法

    公开(公告)号：US07364967B2

    公开(公告)日：2008-04-29

    申请号：US11266520

    申请日：2005-11-03

    申请人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    发明人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/75

    摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.

    摘要翻译： 形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模压氧化层，选择性地去除模制件的部分 在接触塞上方形成凹部，在凹部的底面和侧面形成钛层，在钛层上形成氮化钛层，在氮化钛层上形成氮化钛层。 存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物 层在氮化钛层上。

    Storage capacitors for semiconductor devices and methods of forming the same
    7.
    发明申请
    Storage capacitors for semiconductor devices and methods of forming the same 有权
    用于半导体器件的存储电容器及其形成方法

    公开(公告)号：US20060099760A1

    公开(公告)日：2006-05-11

    申请号：US11266520

    申请日：2005-11-03

    申请人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    发明人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/75

    摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.

    摘要翻译： 形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模压氧化层，选择性地去除模制件的部分 在接触塞上方形成凹部，在凹部的底面和侧面形成钛层，在钛层上形成氮化钛层，在氮化钛层上形成氮化钛层。 存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物 层在氮化钛层上。

    Method of forming low resistance tungsten films
    9.
    发明申请
    Method of forming low resistance tungsten films 审中-公开
    低电阻钨膜的形成方法

    公开(公告)号：US20070026671A1

    公开(公告)日：2007-02-01

    申请号：US11476793

    申请日：2006-06-29

    申请人： Rak-Hwan Kim ,  Young-Cheon Kim

    发明人： Rak-Hwan Kim ,  Young-Cheon Kim

    IPC分类号： H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/76865 ,  H01L21/76843 ,  H01L21/76877

    摘要： Provided is a method for forming low resistance metal films in which an underlying film, for example, a barrier layer or an adhesion layer, is formed on a semiconductor substrate. The underlying film is then subjected to a partial etch back in order to reduce the surface roughness and form a deposition surface. A metal film, for example, a tungsten film, is then formed on a deposition surface that has been formed on the underlying film. Forming the metal film on the deposition surface that has reduced surface roughness will tend to produce a metal film having a larger average grain size and, consequently, a lower sheet resistivity for a given film thickness.

    摘要翻译： 提供一种形成低电阻金属膜的方法，其中在半导体衬底上形成底层膜，例如阻挡层或粘附层。 然后对底层膜进行部分回蚀，以减少表面粗糙度并形成沉积表面。 然后在已经形成在下面的膜上的沉积表面上形成金属膜，例如钨膜。 在沉积表面上形成具有降低的表面粗糙度的金属膜将倾向于产生具有较大平均晶粒尺寸的金属膜，并因此产生给定膜厚度的较低的薄层电阻率。