发明申请
- 专利标题： LOW WORK FUNCTION METAL ALLOY
- 专利标题（中）： 低功能金属合金
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申请号： US11382875申请日： 2006-05-11
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公开(公告)号： US20060286802A1公开(公告)日： 2006-12-21
- 发明人: HongYu Yu , Chen JingDe , Li Mingfu , Dim-Lee Kwong , Serge Biesemans , Jorge Kittl
- 申请人： HongYu Yu , Chen JingDe , Li Mingfu , Dim-Lee Kwong , Serge Biesemans , Jorge Kittl
- 优先权： EPEP05447278.2 20051209; EPEP06447002.4 20060101
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.
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