发明申请
- 专利标题： DUAL WORK FUNCTION GATE ELECTRODES USING DOPED POLYSILICON AND A METAL SILICON GERMANIUM COMPOUND
- 专利标题（中）： 使用掺杂多晶硅和金属硅锗化合物的双功能门电极
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申请号： US11463128申请日： 2006-08-08
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公开(公告)号： US20060292790A1公开(公告)日： 2006-12-28
- 发明人: Antonio Rotondaro , Mark Visokay , Luigi Colombo
- 申请人： Antonio Rotondaro , Mark Visokay , Luigi Colombo
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L29/76
摘要：
A dielectric layer (50) is formed over a semiconductor (10) that contains a first region (20) and a second region (30). A polysilicon layer is formed over the dielectric layer (50) and over the first region (20) and the second region (30). The polysilicon layer can comprise 0 to 50 atomic percent of germanium. A metal layer is formed over the polysilicon layer and one of the regions and reacted with the underlying polysilicon layer to form a metal silicide or a metal germano silicide. The polysilicon and metal silicide or germano silicide regions are etched to form transistor gate regions (60) and (90) respectively. If desired a cladding layer (100) can be formed above the metal gate structures.
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