发明申请
US20070004123A1 Transistor with improved tip profile and method of manufacture thereof
有权
具有改进尖端轮廓的晶体管及其制造方法
- 专利标题: Transistor with improved tip profile and method of manufacture thereof
- 专利标题(中): 具有改进尖端轮廓的晶体管及其制造方法
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申请号: US11173660申请日: 2005-06-30
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公开(公告)号: US20070004123A1公开(公告)日: 2007-01-04
- 发明人: Mark Bohr , Steven Keating , Thomas Letson , Anand Murthy , Donald O'Neill , Willy Rachmady
- 申请人: Mark Bohr , Steven Keating , Thomas Letson , Anand Murthy , Donald O'Neill , Willy Rachmady
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide.