发明申请
US20070090444A1 Nonvolatile memory device including nano dot and method of fabricating the same
审中-公开
包括纳米点的非易失性存储器件及其制造方法
- 专利标题： Nonvolatile memory device including nano dot and method of fabricating the same
- 专利标题（中）： 包括纳米点的非易失性存储器件及其制造方法
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申请号： US11584543申请日： 2006-10-23
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公开(公告)号： US20070090444A1公开(公告)日： 2007-04-26
- 发明人: Sang-Jin Park , Myoung-Jae Lee , Young-Kwan Cha , Sun-Ae Seo , Kyung-Sang Cho , Kwang-Soo Seol
- 申请人： Sang-Jin Park , Myoung-Jae Lee , Young-Kwan Cha , Sun-Ae Seo , Kyung-Sang Cho , Kwang-Soo Seol
- 专利权人： Samsung Electronics Co, Ltd.
- 当前专利权人： Samsung Electronics Co, Ltd.
- 优先权： KR10-2005-0099737 20051021
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/8238
摘要：
A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example embodiments, the current paths inside the oxide layer may be unified, thereby stabilizing the reset current.
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