发明申请
- 专利标题: STRUCTURE AND METHOD FOR MONITORING STRESS-INDUCED DEGRADATION OF CONDUCTIVE INTERCONNECTS
- 专利标题(中): 用于监测导电互连的应力诱导降解的结构和方法
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申请号: US11163948申请日: 2005-11-04
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公开(公告)号: US20070115018A1公开(公告)日: 2007-05-24
- 发明人: Kaushik Chanda , Birendra Agarwala , Lawrence Clevenger , Andrew Cowley , Ronald Filippi , Jason Gill , Tom Lee , Baozhen Li , Paul McLaughlin , Du Nguyen , Hazara Rathore , Timothy Sullivan , Chih-Chao Yang
- 申请人: Kaushik Chanda , Birendra Agarwala , Lawrence Clevenger , Andrew Cowley , Ronald Filippi , Jason Gill , Tom Lee , Baozhen Li , Paul McLaughlin , Du Nguyen , Hazara Rathore , Timothy Sullivan , Chih-Chao Yang
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: G01R31/26
- IPC分类号: G01R31/26
摘要:
A microelectronic element such as a chip or microelectronic wiring substrate is provided which includes a plurality of conductive interconnects for improved resistance to thermal stress. At least some of the conductive interconnects include a metallic plate, a metallic connecting line and an upper metallic via. The metallic connecting line has an upper surface at least substantially level with an upper surface of the metallic plate, an inner end connected to the metallic plate at one of the peripheral edges, and an outer end horizontally displaced from the one peripheral edge. The metallic connecting line has a width much smaller than the width of the one peripheral edge of the metallic plate and has length greater than the width of the one peripheral edge. The upper metallic via has a bottom end in contact with the metallic connecting line at a location that is horizontally displaced from the one peripheral edge by at least about 3 microns (μm).
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