发明申请
US20070116872A1 Apparatus for thermal and plasma enhanced vapor deposition and method of operating
审中-公开
用于热和等离子体增强气相沉积的装置和操作方法
- 专利标题: Apparatus for thermal and plasma enhanced vapor deposition and method of operating
- 专利标题(中): 用于热和等离子体增强气相沉积的装置和操作方法
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申请号: US11281372申请日: 2005-11-18
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公开(公告)号: US20070116872A1公开(公告)日: 2007-05-24
- 发明人: Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
- 申请人: Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; H05H1/24 ; G06F19/00 ; A01K15/02
摘要:
A method, computer readable medium, and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support and translate the substrate between a first position in the transfer space to a second position in the process space. The system includes a sealing assembly configured to impede gas flow between the process space and the transfer space during translation of the substrate within the process space.