发明申请
US20070116873A1 Apparatus for thermal and plasma enhanced vapor deposition and method of operating
审中-公开
用于热和等离子体增强气相沉积的装置和操作方法
- 专利标题: Apparatus for thermal and plasma enhanced vapor deposition and method of operating
- 专利标题(中): 用于热和等离子体增强气相沉积的装置和操作方法
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申请号: US11281376申请日: 2005-11-18
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公开(公告)号: US20070116873A1公开(公告)日: 2007-05-24
- 发明人: Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
- 申请人: Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 主分类号: H05H1/24
- IPC分类号: H05H1/24 ; C23C16/00 ; G06F19/00
摘要:
A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.