发明申请
- 专利标题： Plasma treatment device
- 专利标题（中）： 等离子体处理装置
-
申请号： US11702075申请日： 2007-02-05
-
公开(公告)号： US20070158027A1公开(公告)日： 2007-07-12
- 发明人: Makoto Aoki , Hikaru Yoshitaka , Yoshihiro Kato , Shigeo Ashigaki , Syoichi Abe
- 申请人： Makoto Aoki , Hikaru Yoshitaka , Yoshihiro Kato , Shigeo Ashigaki , Syoichi Abe
- 申请人地址： JP Minato-ku
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2001-70422 20010313
- 主分类号： C23F1/00
- IPC分类号： C23F1/00 ; C23C16/00
摘要：
In a parallel plate type plasma processing apparatus (1), a baffle plate (28) is fitted between a ceiling (2b) and side wall (2a) of a chamber (2). The baffle plate (28) confines plasma into the upper portion of the chamber (2), and at the same time, constitutes a return route of a return current to a high frequency power source (27). A return current flowing through the baffle plate (28) returns to the high frequency power source (27) via the ceiling (2b) of the chamber (2).
信息查询
