发明申请
- 专利标题: INTEGRATED CAPACITOR STRUCTURE
- 专利标题(中): 集成电容结构
-
申请号: US11538227申请日: 2006-10-03
-
公开(公告)号: US20070181924A1公开(公告)日: 2007-08-09
- 发明人: Peter Baumgartner , Philipp Riess , Thomas Benetik , Dieter Draxelmayr
- 申请人: Peter Baumgartner , Philipp Riess , Thomas Benetik , Dieter Draxelmayr
- 申请人地址: DE MUNCHEN 71669
- 专利权人: INFINEON TECHNOLOGIES AG
- 当前专利权人: INFINEON TECHNOLOGIES AG
- 当前专利权人地址: DE MUNCHEN 71669
- 优先权: DE102005047409.8 20051004
- 主分类号: H01L29/94
- IPC分类号: H01L29/94 ; H01L27/108 ; H01L29/76 ; H01L31/119
摘要:
A semiconductor component includes an integrated capacitor structure embodied at least partly in an electrically conductive plane and which is patterned such that a multiplicity of strip elements are present. A first group of strip elements constitutes a first electrode of the capacitor structure and a second group of strip elements constitutes a second electrode of the capacitor structure. The first strip elements together with the second strip elements being at least partly interlinked in one another, and at least one strip element may have a non-constant width along its length.
公开/授权文献
- US07485945B2 Integrated capacitor structure 公开/授权日:2009-02-03