发明申请
- 专利标题: METHOD FOR CONDUCTIVITY CONTROL OF (Al,In,Ga,B)N
- 专利标题(中): (Al,In,Ga,B)N的电导率控制方法
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申请号: US11673426申请日: 2007-02-09
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公开(公告)号: US20070190758A1公开(公告)日: 2007-08-16
- 发明人: John Kaeding , Hitoshi Sato , Michael Iza , Hirokuni Asamizu , Hong Zhong , Steven DenBaars , Shuji Nakamura
- 申请人: John Kaeding , Hitoshi Sato , Michael Iza , Hirokuni Asamizu , Hong Zhong , Steven DenBaars , Shuji Nakamura
- 申请人地址: US CA Oakland 94607
- 专利权人: The Regents of the University of California
- 当前专利权人: The Regents of the University of California
- 当前专利权人地址: US CA Oakland 94607
- 主分类号: H01L21/04
- IPC分类号: H01L21/04 ; H01L29/15
摘要:
A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
公开/授权文献
- US08193079B2 Method for conductivity control of (Al,In,Ga,B)N 公开/授权日:2012-06-05