摘要:
A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
摘要:
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译:使用有意识的基板改善半极性(Al,In,Ga,B)N半导体薄膜生长的方法。 具体地说,该方法包括有意地对基片进行杂交,将基底加载到反应器中,在氮气和/或氢气和/或氨气流下加热基底,沉积In x 在加热的衬底上的N-X成核层,在In N x Ga 1-x N成核层上沉积半极性氮化物半导体薄膜,并冷却 底物在氮气过压下。
摘要:
A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译:通过使用含有至少一些铟的(Al,In,Ga)N成核层,通过金属有机化学气相沉积(MOCVD)增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地说,该方法包括将衬底装载到反应器中,在氮气和/或氢气和/或氨气流下加热衬底,沉积In x N 1 Ga 1-x SUB 在加热的衬底上形成N成核层,在In + N 1 Ga 1-x N成核层上沉积半极性氮化物半导体薄膜,并在氮气过压下冷却衬底 。
摘要:
A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.
摘要:
A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source.