发明申请
- 专利标题： METHOD OF SEPARATING A STRUCTURE IN A SEMICONDUCTOR DEVICE
- 专利标题（中）： 在半导体器件中分离结构的方法
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申请号： US11278180申请日： 2006-03-31
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公开(公告)号： US20070238278A1公开(公告)日： 2007-10-11
- 发明人: Leo Mathew , Ramachandran Muralidhar , Veeraraghavan Dhandapani
- 申请人： Leo Mathew , Ramachandran Muralidhar , Veeraraghavan Dhandapani
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205
摘要：
Removing a portion of a structure in a semiconductor device to separate the structure. The structure has two portions of different heights. In one example, the structure is removed by forming a spacer over the lower portion adjacent to the sidewall of the higher portion. A second material is then formed on the structure outside of the spacer. The spacer is removed and the portion under the spacer is then removed to separate the structure at that location. In one embodiment, separate channel regions are implemented in the separated structures. In other embodiments, separate gate structures are implemented in the separated structures.
公开/授权文献
- US07427549B2 Method of separating a structure in a semiconductor device 公开/授权日：2008-09-23
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