发明申请
- 专利标题： SEMICONDUCTOR DEVICES AND FABRICATION METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11380666申请日： 2006-04-28
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公开(公告)号： US20070252277A1公开(公告)日： 2007-11-01
- 发明人: Jung-Chih Tsao , Kei-Wei Chen , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
- 申请人： Jung-Chih Tsao , Kei-Wei Chen , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/4763
摘要：
A semiconductor device. The semiconductor device includes a substrate, a dielectric layer formed thereon, an opening formed in the dielectric layer, a first barrier layer overlying the sidewall of the opening, a second barrier layer overlying the first barrier layer and the bottom of the opening, and a conductive layer filled into the opening. The invention also provides a method of fabricating the semiconductor device.