发明申请
- 专利标题: CMOS IMAGER ARRAY WITH RECESSED DIELECTRIC
- 专利标题(中): CMOS图像阵列带有电介质
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申请号: US11560882申请日: 2006-11-17
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公开(公告)号: US20080116537A1公开(公告)日: 2008-05-22
- 发明人: James W. Adkisson , Jeffrey P. Gambino , Zhong-Xiang He , Mark D. Jaffe , Robert K. Leidy , Stephen E. Luce , Richard J. Rassel , Edmund J. Sprogis
- 申请人: James W. Adkisson , Jeffrey P. Gambino , Zhong-Xiang He , Mark D. Jaffe , Robert K. Leidy , Stephen E. Luce , Richard J. Rassel , Edmund J. Sprogis
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L21/04
摘要:
A CMOS image sensor array and method of fabrication. The CMOS imager sensor array comprises a substrate; an array of light receiving pixel structures formed above the substrate, the array having formed therein “m” levels of conductive structures, each level formed in a corresponding interlevel dielectric material layer; a dense logic wiring region formed adjacent to the array of light receiving pixel structures having “n” levels of conductive structures, each level formed in a corresponding interlevel dielectric material layer, where n>m. A microlens array having microlenses and color filters formed above the interlevel dielectric material layer, a microlens and respective color filter in alignment with a respective light receiving structure formed at a surface of the substrate. A top surface of the interlevel dielectric material layer beneath the microlens array is recessed from a top surface of the interlevel dielectric material layers of the dense logic wiring region.
公开/授权文献
- US07781781B2 CMOS imager array with recessed dielectric 公开/授权日:2010-08-24
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