A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ρ of at least 0.02 Ω-cm (typically 0.02-1.0 Ω-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 kΩ/□ may also be obtained. The resulting thin film is preferably at least 200 Å thick, to reduce surface scattering conduction currents.