公开(公告)号：US07609144B2

公开(公告)日：2009-10-27

申请号：US11608668

申请日：2006-12-08

申请人： Michael Lee ,  Steven Wright ,  Philip Judge ,  Craig Wilson ,  Gregory Cestra ,  Derek Bowers

发明人： Michael Lee ,  Steven Wright ,  Philip Judge ,  Craig Wilson ,  Gregory Cestra ,  Derek Bowers

IPC分类号： H01C1/012

CPC分类号： H01C7/006 ,  Y10T29/49082

摘要： A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ρ of at least 0.02 Ω-cm (typically 0.02-1.0 Ω-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 kΩ/□ may also be obtained. The resulting thin film is preferably at least 200 thick, to reduce surface scattering conduction currents.

摘要翻译： 薄膜组合物由硅，诸如氧化铝或二氧化硅的绝缘体和至少一种另外的材料如铬，镍，硼和/或碳制成。 将这些材料组合以提供具有至少0.02Ω·cm（通常为0.02-1.0Ω·cm）的rho和小于±1000ppm /℃（通常小于±300ppm /℃）的TCR的薄膜， C。）。 也可以获得至少20kOmega /□的薄层电阻。 所得薄膜优选为至少200 厚，以减少表面散射传导电流。

公开(公告)号：US20080136579A1

公开(公告)日：2008-06-12

申请号：US11608668

申请日：2006-12-08

申请人： Michael Lee ,  Steven Wright ,  Philip Judge ,  Craig Wilson ,  Gregory Cestra ,  Derek Bowers

发明人： Michael Lee ,  Steven Wright ,  Philip Judge ,  Craig Wilson ,  Gregory Cestra ,  Derek Bowers

IPC分类号： H01C1/012 ,  H01C17/06 ,  B05D5/12

CPC分类号： H01C7/006 ,  Y10T29/49082

摘要： A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ρ of at least 0.02 Ω-cm (typically 0.02-1.0 Ω-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 kΩ/□ may also be obtained. The resulting thin film is preferably at least 200 Å thick, to reduce surface scattering conduction currents.

摘要翻译： 薄膜组合物由硅，诸如氧化铝或二氧化硅的绝缘体和至少一种另外的材料如铬，镍，硼和/或碳制成。 将这些材料组合以提供具有至少0.02Ω·cm（通常为0.02-1.0Ω·cm）的rho和小于±1000ppm /℃（通常小于±300ppm /℃）的TCR的薄膜， C。）。 也可以获得至少20kOmega /□的薄层电阻。 所得薄膜优选至少为200埃，以减少表面散射传导电流。