发明申请
- 专利标题： Memory device with improved data retention
- 专利标题（中）： 具有改善数据保留性能的内存设备
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申请号： US11642477申请日： 2006-12-20
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公开(公告)号： US20080152934A1公开(公告)日： 2008-06-26
- 发明人: Igor Sokolik , Juri Krieger , Xiaobo Shi , Richard Kingsborough , William Leonard
- 申请人： Igor Sokolik , Juri Krieger , Xiaobo Shi , Richard Kingsborough , William Leonard
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 主分类号： B32B9/00
- IPC分类号： B32B9/00 ; B32B27/00
摘要：
The present memory device includes first and second electrodes, a passive layer between the first and second electrodes; and an active layer between the first and second electrodes, the active layer being of dendrimeric material which provides passages through the active layer.
公开/授权文献
- US07449742B2 Memory device with active layer of dendrimeric material 公开/授权日：2008-11-11
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