Directed material assembly
    2.
    发明授权
    Directed material assembly 有权
    定向材料组装

    公开(公告)号:US08551566B2

    公开(公告)日:2013-10-08

    申请号:US12707129

    申请日:2010-02-17

    IPC分类号: B05D3/00 B05D3/06

    摘要: Methods of directing assembly of materials using a surface-modified substrate are disclosed. A modified surface is created on a substrate by applying a first surface agent to the substrate. Energy is applied to the modified surface to form an imaged surface having an imaged portion and a non-imaged portion. The imaged portion is characterized by a surface energy that is different from the surface energy of the non-imaged portion. For example, the applied energy can remove at least a portion of an attached surface agent from the imaged portion to modify the surface energy. In some preferred embodiments the energy also modifies the surface agent without causing oxidation. To avoid oxidation, for example, the surface modification and/or energy appliement can take place in a low oxygen environment (e.g., having an oxygen content lower than that present in about 0.01 Torr of air). The imaged surface can then be exposed to a self assembling material, such as a block copolymer, such that the surface can direct assembly of the self assembling material by preferential attachment of certain moieties of the block copolymer to imaged or non-imaged portions of the surface in order to form a selected pattern.

    摘要翻译: 公开了使用表面改性基材引导材料组装的方法。 通过向基材施加第一表面剂,在基材上形成改性表面。 将能量施加到改性表面以形成具有成像部分和非成像部分的成像表面。 成像部分的特征在于与非成像部分的表面能不同的表面能。 例如,施加的能量可以从成像部分去除附着的表面剂的至少一部分,以改变表面能。 在一些优选的实施方案中,能量还可以改变表面剂而不引起氧化。 为了避免氧化,例如,表面改性和/或能量施加可以在低氧环境中发生(例如,氧含量低于大约0.01Torr空气中的氧含量)。 成像的表面然后可以暴露于自组装材料,例如嵌段共聚物,使得表面可以通过优先将嵌段共聚物的某些部分附着到成像或非成像部分上来引导自组装材料的组装 表面以形成选定的图案。

    Polymers with low band gaps and high charge mobility
    6.
    发明授权
    Polymers with low band gaps and high charge mobility 有权
    具有低带隙和高电荷迁移率的聚合物

    公开(公告)号:US07781673B2

    公开(公告)日:2010-08-24

    申请号:US11450521

    申请日:2006-06-09

    IPC分类号: C07D403/04 H01L29/12

    摘要: This disclosure relates to a polymer containing a first comonomer repeat unit and a second comonomer repeat unit. The first comonomer repeat unit includes a cyclopentadithiophene moiety. The second comonomer repeat unit includes a thienothiophene moiety, a thienothiophene tetraoxide moiety, a dithienothiophene moiety, a dithienothiophene dioxide moiety, a dithienothiophene tetraoxide moiety, or a tetrahydroisoindole moiety. The polymer can be used as a photoactive material in a photovoltaic cell. This disclosure also relates to such photovoltaic cells, as well as modules containing such photovoltaic cells.

    摘要翻译: 本公开涉及含有第一共聚单体重复单元和第二共聚单体重复单元的聚合物。 第一共聚单体重复单元包括环戊二噻吩部分。 第二共聚单体重复单元包括噻吩并噻吩部分,噻吩并噻吩四氧化物部分,二噻吩并噻吩部分,二噻吩并噻吩二氧化物部分,二硫代噻吩四氧化物部分或四氢异吲哚部分。 聚合物可以用作光伏电池中的光活性材料。 本公开还涉及这种光伏电池以及包含这种光伏电池的模块。

    Memory element using active layer of blended materials
    7.
    发明授权
    Memory element using active layer of blended materials 有权
    记忆元素使用有源层的混合材料

    公开(公告)号:US07378682B2

    公开(公告)日:2008-05-27

    申请号:US11052688

    申请日:2005-02-07

    IPC分类号: H01L51/00

    摘要: The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

    摘要翻译: 本存储器件具有第一和第二电极,在第一和第二电极之间并且与第一电极接触并且与第一电极接触的无源层以及在第一和第二电极之间并且与被动层和第二电极接触的有源层 电极,用于从被动层接收带电物质。 活性层是(i)第一聚合物和(ii)用于增强离子迁移的第二聚合物的混合物,改善界面并促进活性层中带电物质的快速且基本上均匀的分布,即防止 局部注射带电物种。 这些特征导致存储元件具有改进的稳定性,更可控的导通电阻,改进的开关速度和较低的编程电压。