发明申请
- 专利标题： Plasma Source with Liner for Reducing Metal Contamination
- 专利标题（中）： 用于减少金属污染的衬垫的等离子体源
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申请号： US11623739申请日： 2007-01-16
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公开(公告)号： US20080169183A1公开(公告)日： 2008-07-17
- 发明人: Richard J. Hertel , You Chia Li , Philip J. McGrail , Timothy J. Miller , Harold M. Persing , Vikram Singh
- 申请人： Richard J. Hertel , You Chia Li , Philip J. McGrail , Timothy J. Miller , Harold M. Persing , Vikram Singh
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H05F3/00
- IPC分类号： H05F3/00
摘要：
A plasma source having a plasma chamber with metal chamber walls contains a process gas. A dielectric window passes a RF signal into the plasma chamber. The RF signal excites and ionizes the process gas, thereby forming a plasma in the plasma chamber. A plasma chamber liner that is positioned inside the plasma chamber provides line-of-site shielding of the inside of the plasma chamber from metal sputtered by ions striking the metal walls of the plasma chamber.
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