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发明申请
US20080174021A1 SEMICONDUCTOR DEVICES HAVING METAL INTERCONNECTIONS, SEMICONDUCTOR CLUSTER TOOLS USED IN FABRICATION THEREOF AND METHODS OF FABRICATING THE SAME 审中-公开
具有金属互连的半导体器件，其制造中使用的半导体器件工具及其制造方法

SEMICONDUCTOR DEVICES HAVING METAL INTERCONNECTIONS, SEMICONDUCTOR CLUSTER TOOLS USED IN FABRICATION THEREOF AND METHODS OF FABRICATING THE SAME
摘要：
A method of fabricating a semiconductor device is provided. The method includes providing a semiconductor substrate having a conductive pattern and forming an insulating layer on the conductive pattern and the semiconductor substrate. The insulating layer is patterned to form an opening which exposes a portion of the conductive pattern. A preliminary diffusion barrier layer is formed on an inner wall of the opening and a top surface of the insulating layer. Oxygen atoms are supplied onto the preliminary diffusion barrier layer to form a first diffusion barrier layer. A metal layer is formed on the first diffusion barrier layer. The metal layer is formed to fill the opening surrounded by the first diffusion barrier layer. A semiconductor device fabricated by the method and a semiconductor cluster tool used in fabrication of the semiconductor device are also provided.
摘要（中）：

提供一种制造半导体器件的方法。 该方法包括提供具有导电图案的半导体衬底和在导电图案和半导体衬底上形成绝缘层。 图案化绝缘层以形成露出导电图案的一部分的开口。 在开口的内壁和绝缘层的上表面上形成预扩散阻挡层。 将氧原子提供到预扩散阻挡层上以形成第一扩散阻挡层。 金属层形成在第一扩散阻挡层上。 金属层形成为填充由第一扩散阻挡层包围的开口。 还提供了通过该方法制造的半导体器件和用于制造半导体器件的半导体簇工具。

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