发明申请
US20080198881A1 OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS
有权
激光棒取向非极性和半导体（Ga，Al，In，B）N二极体激光器的优化
- 专利标题： OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS
- 专利标题（中）： 激光棒取向非极性和半导体（Ga，Al，In，B）N二极体激光器的优化
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申请号： US12030124申请日： 2008-02-12
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公开(公告)号： US20080198881A1公开(公告)日： 2008-08-21
- 发明人: Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01S5/06
- IPC分类号： H01S5/06
摘要：
Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
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