Invention Application
US20080203486A1 METHOD FOR DIFFERENTIAL SPACER REMOVAL BY WET CHEMICAL ETCH PROCESS AND DEVICE WITH DIFFERENTIAL SPACER STRUCTURE
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通过湿式化学蚀刻工艺除去差分间隔的方法和具有差异间隔结构的装置
- Patent Title: METHOD FOR DIFFERENTIAL SPACER REMOVAL BY WET CHEMICAL ETCH PROCESS AND DEVICE WITH DIFFERENTIAL SPACER STRUCTURE
- Patent Title (中): 通过湿式化学蚀刻工艺除去差分间隔的方法和具有差异间隔结构的装置
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Application No.: US11866491Application Date: 2007-10-03
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Publication No.: US20080203486A1Publication Date: 2008-08-28
- Inventor: Maciej Wiatr , Frank Wirbeleit , Andy Wei , Andreas Gehring
- Applicant: Maciej Wiatr , Frank Wirbeleit , Andy Wei , Andreas Gehring
- Priority: DE102007009916.0 20070228
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/04 ; H01L21/302
Abstract:
By removing an outer spacer of a transistor element, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal silicide, employing a wet chemical etch process, it is possible to position a stressed contact liner layer more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region, without affecting circuit elements in the P-type regions.
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