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发明申请
US20080203507A1 Image sensors for zoom lenses and fabricating methods thereof 审中-公开
用于变焦镜头的图像传感器及其制造方法

Image sensors for zoom lenses and fabricating methods thereof
摘要：
An image sensor includes a semiconductor substrate on which a plurality of photo diodes are formed. A plurality of interlayer dielectrics are formed above the semiconductor substrate, and a plurality of metal lines are formed on each of the interlayer dielectrics. A plurality of micro lenses are formed above the uppermost one of the interlayer dielectrics. The light passing through the zoom lenses is incident on the respective micro lenses. The plurality metal lines formed on at least one of the plurality of interlayer dielectrics have the same width.
摘要（中）：

图像传感器包括其上形成有多个光电二极管的半导体基板。 在半导体衬底上形成多个层间电介质，并且在每个层间电介质上形成多个金属线。 多层微透镜形成在最上面的层间电介质之上。 通过变焦镜头的光入射到相应的微透镜上。 形成在多个层间电介质中的至少一个的多个金属线具有相同的宽度。

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