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    UNIT PIXEL ARRAY AND IMAGE SENSOR HAVING THE SAME
    4.
    发明申请
    UNIT PIXEL ARRAY AND IMAGE SENSOR HAVING THE SAME 有权
    单元像素阵列和图像传感器

    公开(公告)号：US20120050600A1

    公开(公告)日：2012-03-01

    申请号：US13218550

    申请日：2011-08-26

    申请人： Jung-Chak AHN ,  Bum-Suk Kim ,  Kyung-Ho Lee ,  Eun-Sub Shim

    发明人： Jung-Chak AHN ,  Bum-Suk Kim ,  Kyung-Ho Lee ,  Eun-Sub Shim

    IPC分类号： H04N9/07 ,  H01L27/146

    CPC分类号： H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    摘要： A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of unit pixels, an interlayer insulating layer disposed on a front side of the semiconductor substrate, a plurality of color filters disposed on a back side of the semiconductor substrate, a plurality of light path converters, each of the light path converters being disposed adjacent to at least one color filter and having a pair of slanted side edges extending from opposing ends of a horizontal bottom edge, and a plurality of micro lenses disposed on the color filters.

    摘要翻译： 图像传感器的单位像素阵列包括具有多个单位像素的半导体衬底，设置在半导体衬底的前侧的层间绝缘层，设置在半导体衬底背面的多个滤色器，多个 每个光路转换器设置成与至少一个滤色器相邻，并且具有从水平底部边缘的相对端延伸的一对倾斜侧边缘和设置在滤色器上的多个微透镜。

    Color filter array, image sensor including the same, and electronic device including the color filter array
    6.
    发明申请
    Color filter array, image sensor including the same, and electronic device including the color filter array 有权
    滤色器阵列，包括其的图像传感器和包括滤色器阵列的电子设备

    公开(公告)号：US20110012011A1

    公开(公告)日：2011-01-20

    申请号：US12805109

    申请日：2010-07-13

    申请人： Tae Sub Jung ,  Bum Suk Kim ,  Jung Chak Ahn ,  Jin Hak Kim

    发明人： Tae Sub Jung ,  Bum Suk Kim ,  Jung Chak Ahn ,  Jin Hak Kim

    IPC分类号： H01L27/00 ,  G02F1/1335

    CPC分类号： H01L27/14621 ,  G02F1/133514 ,  G02F2201/52 ,  H01L27/14609

    摘要： A color filter array is provided. The color filter array includes a plurality of basic filter blocks arranged in all directions. Each of the basic filter blocks include one or more color filters. The color filters include a first type color filter that passes through all light without filtering it or has a higher light transmittance than a second type color filter, a third type color filter, and a fourth type color filter. The second through fourth color filters being a red, green or blue filter. Accordingly, the color filter array increases sensitivity to incident light or increases brightness of outgoing light.

    摘要翻译： 提供了一个滤色器阵列。 滤色器阵列包括沿着所有方向布置的多个基本滤波器块。 每个基本过滤器块包括一个或多个滤色器。 滤色器包括通过所有光而不过滤或具有比第二类型滤色器，第三类型滤色器和第四类型滤色器更高的透光率的第一类型滤色器。 第二至第四滤色器是红色，绿色或蓝色滤色片。 因此，滤色器阵列增加对入射光的灵敏度或增加出射光的亮度。

    Solid-state image sensing device including anti-reflection structure including polysilicon and method of manufacturing the same
    8.
    发明授权
    Solid-state image sensing device including anti-reflection structure including polysilicon and method of manufacturing the same 有权
    包括多晶硅的抗反射结构的固态图像感测装置及其制造方法

    公开(公告)号：US07709919B2

    公开(公告)日：2010-05-04

    申请号：US11679614

    申请日：2007-02-27

    申请人： Getman Alexander ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim

    发明人： Getman Alexander ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim

    IPC分类号： H01L31/0216

    CPC分类号： H01L27/1462 ,  G02B1/11 ,  H01L27/14685 ,  H01L31/0203

    摘要： A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes a semiconductor substrate, a first anti-refection layer, a second anti-reflection layer, and a top layer. The first anti-reflection layer is formed on the semiconductor substrate, and the second anti-reflection layer is formed on the first anti-reflection layer. The top layer is formed on the second anti-reflection layer. Each of the semiconductor substrate and the second anti-reflection layer is formed of a first material, and each of the first anti-reflection layer and the top layer is formed of a second material different from the first material.

    摘要翻译： 包括使用多晶硅的抗反射结构的固态图像感测装置及其制造方法，其中固态图像感测装置包括光电二极管区域和晶体管区域。 光电二极管区域包括半导体衬底，第一抗反射层，第二抗反射层和顶层。 第一防反射层形成在半导体衬底上，第二抗反射层形成在第一抗反射层上。 顶层形成在第二防反射层上。 半导体衬底和第二抗反射层中的每一个由第一材料形成，并且第一抗反射层和顶层中的每一个由与第一材料不同的第二材料形成。