发明申请
- 专利标题： METHODS OF FORMING A SEMICONDUCTOR DEVICE INCLUDING A DIFFUSION BARRIER FILM
- 专利标题（中）： 形成包括扩散阻挡膜的半导体器件的方法
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申请号： US12112135申请日： 2008-04-30
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公开(公告)号： US20080274610A1公开(公告)日： 2008-11-06
- 发明人: Kyung-In Choi , Gil-Heyun Choi , Hyun-Bae Lee , Jong-Won Hong , Jong-Myeong Lee
- 申请人： Kyung-In Choi , Gil-Heyun Choi , Hyun-Bae Lee , Jong-Won Hong , Jong-Myeong Lee
- 专利权人： Samsung Electronics, Co., Ltd.
- 当前专利权人： Samsung Electronics, Co., Ltd.
- 优先权： KR2007-0043153 20070503
- 主分类号： H01L21/285
- IPC分类号： H01L21/285
摘要：
Methods of forming a semiconductor device that includes a diffusion barrier film are provided. The diffusion barrier film includes a metal nitride formed by using a MOCVD process and partially treated with a plasma treatment. Thus, a specific resistance of the diffusion barrier film can be decreased, and the diffusion barrier film may have distinguished barrier characteristics.