发明申请
- 专利标题： Method and system for controlling copper chemical mechanical polish uniformity
- 专利标题（中）： 控制铜化学机械抛光均匀性的方法和系统
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申请号： US11810720申请日： 2007-06-07
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公开(公告)号： US20080305563A1公开(公告)日： 2008-12-11
- 发明人: Francis Ko , Chun-Hsien Lin , Jean Wang , Chih-Wei Lai , Ping-Hsu Chen , Henry Lo
- 申请人： Francis Ko , Chun-Hsien Lin , Jean Wang , Chih-Wei Lai , Ping-Hsu Chen , Henry Lo
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.
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