发明申请
US20090039436A1 High Performance Metal Gate CMOS with High-K Gate Dielectric
审中-公开
具有高K栅介质的高性能金属栅极CMOS
- 专利标题： High Performance Metal Gate CMOS with High-K Gate Dielectric
- 专利标题（中）： 具有高K栅介质的高性能金属栅极CMOS
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申请号： US11835320申请日： 2007-08-07
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公开(公告)号： US20090039436A1公开(公告)日： 2009-02-12
- 发明人: Bruce B. Doris , Eduard Albert Cartier , Barry Paul Linder , Vijay Narayanan , Vamsi Paruchuri , Mark Todhunter Robson , Michelle L. Steen , Ying Zhang
- 申请人： Bruce B. Doris , Eduard Albert Cartier , Barry Paul Linder , Vijay Narayanan , Vamsi Paruchuri , Mark Todhunter Robson , Michelle L. Steen , Ying Zhang
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238
摘要：
A CMOS structure is disclosed in which both type of FET devices have gate insulators containing high-k dielectrics, and gates containing metals. The threshold of the two type of devices are adjusted in separate manners. One type of device has its threshold set by exposing the high-k dielectric to oxygen. During the oxygen exposure the other type of device is covered by a stressing dielectric layer, which layer also prevents oxygen penetration to its high-k gate dielectric. The high performance of the CMOS structure is further enhanced by adjusting the effective workfunctions of the gates to near band-edge values both NFET and PFET devices.
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