发明申请
- 专利标题: COMPLEX OXIDE NANODOTS
- 专利标题(中): 复合氧化物纳米
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申请号: US11840485申请日: 2007-08-17
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公开(公告)号: US20090045447A1公开(公告)日: 2009-02-19
- 发明人: Nirmal Ramaswamy , Gurtej Sandhu , Bhaskar Srinivasan , John Smythe
- 申请人: Nirmal Ramaswamy , Gurtej Sandhu , Bhaskar Srinivasan , John Smythe
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/316 ; H01L21/28
摘要:
Methods and devices are disclosed, such as those involving forming a charge trap for, e.g., a memory device, which can include flash memory cells. A substrate is exposed to temporally-separated pulses of a titanium source material, a strontium source material, and an oxygen source material capable of forming an oxide with the titanium source material and the strontium source material to form the charge trapping layer on the substrate.
公开/授权文献
- US07851307B2 Method of forming complex oxide nanodots for a charge trap 公开/授权日:2010-12-14
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