发明申请
- 专利标题: POWER SEMICONDUCTOR DEVICE INCLUDING A DOUBLE METAL CONTACT
- 专利标题(中): 功率半导体器件,包括双金属接触
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申请号: US12036718申请日: 2008-02-25
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公开(公告)号: US20090212435A1公开(公告)日: 2009-08-27
- 发明人: Robert Montgomery , Hugo Burke , Philip Parsonage , Susan Johns , David Paul Jones
- 申请人: Robert Montgomery , Hugo Burke , Philip Parsonage , Susan Johns , David Paul Jones
- 主分类号: H01L23/532
- IPC分类号: H01L23/532 ; H01L21/768
摘要:
A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.
公开/授权文献
- US08791525B2 Power semiconductor device including a double metal contact 公开/授权日:2014-07-29