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    Laser ablation to selectively thin wafers/die to lower device RDSON
    4.
    发明申请
    Laser ablation to selectively thin wafers/die to lower device RDSON 有权
    激光烧蚀选择性薄晶片/裸片降低器件RDSON

    公开(公告)号：US20070210407A1

    公开(公告)日：2007-09-13

    申请号：US11636762

    申请日：2006-12-11

    申请人： Hugo Burke ,  Robert Montgomery

    发明人： Hugo Burke ,  Robert Montgomery

    IPC分类号： H01L29/00

    CPC分类号： H01L21/306 ,  H01L21/78 ,  Y10S438/977

    摘要： A laser ablated wafer for a semiconductor device, such as a MOSFET or other power device, and a method of producing such a wafer to achieve a lower electrical resistance are provided. The method includes forming first holes, slots or trenches on a first surface of the wafer and focusing a laser beam to form second trenches on a bottom surface of the wafer, and filling the trenches, for example using aluminum or other metallic filling, to provide conductive electrodes or conductive surfaces for the semiconductor device. In such a wafer each trench on the second surface may be deeper, for example hundreds of microns deep and tens of microns wide.

    摘要翻译： 提供了用于诸如MOSFET或其他功率器件的半导体器件的激光烧蚀晶片，以及制造这样的晶片以实现较低电阻的方法。 该方法包括在晶片的第一表面上形成第一孔，槽或沟槽，并聚焦激光束以在晶片的底表面上形成第二沟槽，并且例如使用铝或其它金属填充物填充沟槽，以提供 导电电极或用于半导体器件的导电表面。 在这种晶片中，第二表面上的每个沟槽可以更深，例如几百微米深和几十微米宽。

    Semiconductor wafer with reduced thickness variation and method for fabricating same
    8.
    发明授权
    Semiconductor wafer with reduced thickness variation and method for fabricating same 有权
    厚度变化减小的半导体晶片及其制造方法

    公开(公告)号：US08987898B2

    公开(公告)日：2015-03-24

    申请号：US13154360

    申请日：2011-06-06

    申请人： Rupert Burbidge ,  David Paul Jones ,  Amarjit Dhadda ,  Robert Montgomery

    发明人： Rupert Burbidge ,  David Paul Jones ,  Amarjit Dhadda ,  Robert Montgomery

    IPC分类号： H01L23/488 ,  H01L21/304 ,  H01L21/683

    CPC分类号： H01L21/304 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor wafer comprises a plurality of solder bumps for providing device contacts formed over a functional region of the semiconductor wafer, and one or more support rings surrounding the functional region. The one or more support rings and the plurality of solder bumps are formed so as to have substantially matching heights. The presence of the one or more support rings causes the semiconductor wafer to have a substantially uniform thickness in the functional region after a thinning process is performed on the semiconductor wafer. A method for fabricating the semiconductor wafer comprises forming the plurality of solder bumps over the functional region, and forming the one or more support rings surrounding the functional region before performing the thinning process on the semiconductor wafer.

    摘要翻译： 根据一个实施例，半导体晶片包括用于提供形成在半导体晶片的功能区域上的器件触点的多个焊料凸块和围绕功能区域的一个或多个支撑环。 一个或多个支撑环和多个焊料凸块被形成为具有基本匹配的高度。 一个或多个支撑环的存在使得半导体晶片在半导体晶片上执行变薄处理之后，在功能区域中具有基本均匀的厚度。 制造半导体晶片的方法包括在功能区域之上形成多个焊料凸块，以及在对半导体晶片进行稀化处理之前形成围绕功能区域的一个或多个支撑环。

    Semiconductor Wafer with Reduced Thickness Variation and Method for Fabricating Same
    9.
    发明申请
    Semiconductor Wafer with Reduced Thickness Variation and Method for Fabricating Same 有权
    具有降低厚度变化的半导体晶片及其制造方法

    公开(公告)号：US20120306072A1

    公开(公告)日：2012-12-06

    申请号：US13154360

    申请日：2011-06-06

    申请人： Rupert Burbidge ,  David Paul Jones ,  Amarjit Dhadda ,  Robert Montgomery

    发明人： Rupert Burbidge ,  David Paul Jones ,  Amarjit Dhadda ,  Robert Montgomery

    IPC分类号： H01L23/488 ,  H01L21/60

    CPC分类号： H01L21/304 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor wafer comprises a plurality of solder bumps for providing device contacts formed over a functional region of the semiconductor wafer, and one or more support rings surrounding the functional region. The one or more support rings and the plurality of solder bumps are formed so as to have substantially matching heights. The presence of the one or more support rings causes the semiconductor wafer to have a substantially uniform thickness in the functional region after a thinning process is performed on the semiconductor wafer. A method for fabricating the semiconductor wafer comprises forming the plurality of solder bumps over the functional region, and forming the one or more support rings surrounding the functional region before performing the thinning process on the semiconductor wafer.

    摘要翻译： 根据一个实施例，半导体晶片包括用于提供形成在半导体晶片的功能区域上的器件触点的多个焊料凸块和围绕功能区域的一个或多个支撑环。 一个或多个支撑环和多个焊料凸块被形成为具有基本匹配的高度。 一个或多个支撑环的存在使得半导体晶片在半导体晶片上执行变薄处理之后，在功能区域中具有基本均匀的厚度。 制造半导体晶片的方法包括在功能区域之上形成多个焊料凸块，以及在对半导体晶片进行稀化处理之前形成围绕功能区域的一个或多个支撑环。

    Wafer singulation process
    10.
    发明授权
    Wafer singulation process 有权
    晶圆切割过程

    公开(公告)号：US08153464B2

    公开(公告)日：2012-04-10

    申请号：US11582756

    申请日：2006-10-18

    申请人： Robert Montgomery

    发明人： Robert Montgomery

    IPC分类号： H01L21/00

    CPC分类号： H01L21/78

    摘要： A method of singulating a semiconductor die from a wafer is provided. The method includes etching or cutting several trenches into the wafer from a front surface of the wafer, such that each trench extends along an entire side of the die; depositing a passivation layer into the trenches to form a passivation plug on at least a bottom of the trenches to protect the dies and immobilize them during singulation; and forming a rigid carrier layer or plate at the first side of the wafer to secure the dies. The wafer is then ground from the back side to expose the bottom of each trench, a metal layer is formed on the back surface of the wafer; dicing tape is added, the carrier layer is removed, and the die is separated from the wafer by laser cutting or by flexing the tape.

    摘要翻译： 提供了一种从晶片上分离半导体管芯的方法。 该方法包括从晶片的前表面蚀刻或切割晶片中的多个沟槽，使得每个沟槽沿模具的整个侧面延伸; 将钝化层沉积到所述沟槽中以在所述沟槽的至少底部上形成钝化塞，以保护所述管芯并在分割过程中将其固定; 以及在所述晶片的第一侧上形成刚性载体层或板以固定所述模具。 然后将晶片从后侧研磨以暴露每个沟槽的底部，在晶片的背面上形成金属层; 加入切割胶带，除去载体层，通过激光切割或通过使胶带弯曲将模具与晶片分离。