发明申请
- 专利标题： Memory Device Manufacturing Method
- 专利标题（中）： 存储器件制造方法
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申请号： US12469184申请日： 2009-05-20
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公开(公告)号： US20090239358A1公开(公告)日： 2009-09-24
- 发明人: Erh-Kun Lai , Chiahua Ho , Kuang Yeu Hsieh
- 申请人： Erh-Kun Lai , Chiahua Ho , Kuang Yeu Hsieh
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A method for making a memory device includes providing a dielectric material, having first and second upwardly and inwardly tapering surfaces and a surface segment connecting the first and second surfaces. First and second electrodes are formed over the first and second surfaces. A memory element is formed over the surface segment to electrically connect the first and second electrodes.
公开/授权文献
- US07972893B2 Memory device manufacturing method 公开/授权日：2011-07-05
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