发明申请
- 专利标题： Method for delineation of phase change memory cell via film resistivity modification
- 专利标题（中）： 通过膜电阻率修饰来描绘相变记忆单元的方法
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申请号： US12492618申请日： 2009-06-26
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公开(公告)号： US20100001253A1公开(公告)日： 2010-01-07
- 发明人: John Christopher Arnold , Lawrence Alfred Clevenger , Timothy Joseph Dalton , Michael Christopher Gaidis , Louis L. Hsu , Carl John Radens , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人： John Christopher Arnold , Lawrence Alfred Clevenger , Timothy Joseph Dalton , Michael Christopher Gaidis , Louis L. Hsu , Carl John Radens , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.