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1.发明申请Method for delineation of phase change memory cell via film resistivity modification 有权通过膜电阻率修饰来描绘相变记忆单元的方法公开(公告)号：US20100001253A1
公开(公告)日：2010-01-07
申请号：US12492618
申请日：2009-06-26
申请人： John Christopher Arnold , Lawrence Alfred Clevenger , Timothy Joseph Dalton , Michael Christopher Gaidis , Louis L. Hsu , Carl John Radens , Keith Kwong Hon Wong , Chih-Chao Yang
发明人： John Christopher Arnold , Lawrence Alfred Clevenger , Timothy Joseph Dalton , Michael Christopher Gaidis , Louis L. Hsu , Carl John Radens , Keith Kwong Hon Wong , Chih-Chao Yang
IPC分类号： H01L45/00
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.
摘要翻译： PCM单元结构包括第一电极，相变元件和第二电极，其中相变元件插入在第一电极和第二电极之间，并且仅第一电极的周边边缘与相变元件接触， 减少相变元件与第一电极之间的接触面积，从而增加通过相变元件的电流密度，并有效地在较低的电流电平和降低的编程功率下引起相变。
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2.发明授权Phase change memory element with a peripheral connection to a thin film electrode 有权具有与薄膜电极的周边连接的相变存储元件公开(公告)号：US07923712B2
公开(公告)日：2011-04-12
申请号：US12492618
申请日：2009-06-26
申请人： John Christopher Arnold , Lawrence Alfred Clevenger , Timothy Joseph Dalton , Michael Christopher Gaidis , Louis L. Hsu , Carl John Radens , Keith Kwong Hon Wong , Chih-Chao Yang
发明人： John Christopher Arnold , Lawrence Alfred Clevenger , Timothy Joseph Dalton , Michael Christopher Gaidis , Louis L. Hsu , Carl John Radens , Keith Kwong Hon Wong , Chih-Chao Yang
IPC分类号： H01L29/02
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.
摘要翻译： PCM单元结构包括第一电极，相变元件和第二电极，其中相变元件插入在第一电极和第二电极之间，并且仅第一电极的周边边缘与相变元件接触， 减少相变元件与第一电极之间的接触面积，从而增加通过相变元件的电流密度，并有效地在较低的电流电平和降低的编程功率下引起相变。
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3.发明授权公开(公告)号：US07442647B1
公开(公告)日：2008-10-28
申请号：US12043129
申请日：2008-03-05
申请人： Sivananda Kanakasabapathy , Eugene J. O'Sullivan , Michael Christopher Gaidis , Michael Francis Lofaro
发明人： Sivananda Kanakasabapathy , Eugene J. O'Sullivan , Michael Christopher Gaidis , Michael Francis Lofaro
IPC分类号： H01L21/311
CPC分类号： H01L43/12 , H01L21/76844 , H01L21/76849 , H01L27/222
摘要： A structure and method for fabricating a top strap in a magnetic random access memory, MRAM, comprising a damascene process forming a trench in a dielectric layer and resulting in a metal conductor clad on three sides by an inverted U-shape trench liner and cap made up of three layers consisting of a stack of a ferromagnetic material sandwiched between two layers of a refractory metal or an alloy of a refractory metal. First the two sidewalls of the trench are formed with the cladding layer, followed by filling the trench with the metal conductor. In preparing the structure for the capping layer, the metal conductor is recessed with an etch that is selective to the metal conductor over the sidewall stack. This preparation may be performed on selected metal filled trenches and blocked on others, such that after a final polishing step, only those metal conductors that received the recess operation will have the capping layer.
摘要翻译： 一种用于制造磁性随机存取存储器中的顶带的结构和方法，MRAM，包括在电介质层中形成沟槽的镶嵌工艺，并且通过倒置的U形沟槽衬垫和盖制成三面包覆金属导体 三层由夹在两层难熔金属或耐火金属合金之间的铁磁材料堆叠组成。 首先，用覆层形成沟槽的两个侧壁，然后用金属导体填充沟槽。 在制备覆盖层的结构时，金属导体以对侧壁叠层上的金属导体有选择性的蚀刻凹陷。 该制备方法可以在所选择的金属填充沟槽上进行，并且在其它金属填充沟槽上进行封闭，使得在最终抛光步骤之后，只有接收到凹陷操作的那些金属导体将具有覆盖层。
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4.发明授权公开(公告)号：US07488661B2
公开(公告)日：2009-02-10
申请号：US11369391
申请日：2006-03-07
IPC分类号： H01L21/336
CPC分类号： H01L21/0332 , H01L21/02304 , H01L21/3083 , H01L21/31144 , H01L43/12
摘要： A device and method for improving adhesion for thin film layers includes applying a diblock copolymer on a surface where adhesion to subsequent layers is needed and curing the diblock copolymer. Pores are formed in the diblock copolymer by treating the diblock copolymer with a solvent. The surface is etched through the pores of the diblock copolymer to form adhesion promoting features. The diblock copolymer is removed, and a layer is deposited on the surface wherein the adhesion promoting features are employed to promote adhesion between the layer and the surface.
摘要翻译： 用于改善薄膜层粘合性的装置和方法包括在需要与后续层粘合的表面上施加二嵌段共聚物并固化二嵌段共聚物。 通过用溶剂处理二嵌段共聚物，在二嵌段共聚物中形成孔。 通过二嵌段共聚物的孔蚀刻该表面以形成附着促进特征。 去除二嵌段共聚物，并且在表面上沉积一层，其中采用粘附促进特征以促进层与表面之间的粘合。
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