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发明申请
US20100012980A1 Contact Structures in Substrate Having Bonded Interface, Semiconductor Device Including the Same, Methods of Fabricating the Same 审中-公开
具有接合界面的基板中的接触结构，包括其的半导体器件，其制造方法

Contact Structures in Substrate Having Bonded Interface, Semiconductor Device Including the Same, Methods of Fabricating the Same
摘要：
On embodiment of a contact structure may include a lower insulation layer on a lower substrate, an upper substrate on the lower insulation layer, a groove penetrating the upper substrate to extend into the lower insulation layer, the groove below an interface between the upper substrate and the lower insulation layer, an upper insulation layer in the groove, and a contact plug penetrating the upper insulation layer in the groove to extend into the lower insulation layer.
摘要（中）：

接触结构的实施例可以包括在下基板上的下绝缘层，下绝缘层上的上基板，穿过上基板以延伸到下绝缘层中的沟槽，在上基板和 下绝缘层，槽中的上绝缘层和穿过槽中的上绝缘层的接触插塞延伸到下绝缘层中。

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