发明申请
- 专利标题: PHOTODIODE
- 专利标题(中): 光电
-
申请号: US12518729申请日: 2007-12-13
-
公开(公告)号: US20100013040A1公开(公告)日: 2010-01-21
- 发明人: Daisuke Okamoto , Junichi FuJikata , Kenichi Nishi , Keishi Ohashi
- 申请人: Daisuke Okamoto , Junichi FuJikata , Kenichi Nishi , Keishi Ohashi
- 申请人地址: JP TOKYO
- 专利权人: NEC CORPORATION
- 当前专利权人: NEC CORPORATION
- 当前专利权人地址: JP TOKYO
- 优先权: JP2006-337035 20061214
- 国际申请: PCT/JP2007/074007 WO 20071213
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232
摘要:
A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.
公开/授权文献
- US08183656B2 Photodiode 公开/授权日:2012-05-22
信息查询
IPC分类: