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    WAVEGUIDE PATH COUPLING-TYPE PHOTODIODE
    1.
    发明申请
    WAVEGUIDE PATH COUPLING-TYPE PHOTODIODE 有权
    波导路耦合型光电转换器

    公开(公告)号：US20100119192A1

    公开(公告)日：2010-05-13

    申请号：US12598162

    申请日：2008-04-30

    申请人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

    发明人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

    IPC分类号： G02B6/12 ,  H01L31/0232

    CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

    摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

    摘要翻译： 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ至λ[λ：通过光波导路径芯透射的光的波长]的间隔布置。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

    Photodiode
    2.
    发明授权
    Photodiode 有权
    光电二极管

    公开(公告)号：US08183656B2

    公开(公告)日：2012-05-22

    申请号：US12518729

    申请日：2007-12-13

    申请人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi ,  Keishi Ohashi

    发明人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi ,  Keishi Ohashi

    IPC分类号： H01L31/322

    CPC分类号： H01L31/1085 ,  H01L31/022408 ,  H01L31/02325

    摘要： A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

    摘要翻译： 光电二极管包括：包括对入射光透明的半导体的上间隔层; 金属周期结构，设置在上间隔层上并且布置成诱导表面等离子体激元，金属周期结构包括第一和第二电极，包括交替设置在上间隔层上的部分; 形成在所述上间隔层下方并且具有折射率高于所述上间隔层的折射率的半导体的光吸收层; 以及形成在光吸收层下面并且具有比光吸收层的折射率小的折射率的下间隔层。 第一和第二电极中的每一个与上间隔层形成肖特基势垒结。

    Waveguide path coupling-type photodiode
    3.
    发明授权
    Waveguide path coupling-type photodiode 有权
    波导路耦合型光电二极管

    公开(公告)号：US08467637B2

    公开(公告)日：2013-06-18

    申请号：US12598162

    申请日：2008-04-30

    申请人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

    发明人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

    IPC分类号： G02B6/12 ,  G02B6/26 ,  H01L29/47

    CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

    摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

    摘要翻译： 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ到λλ通过光波导路径芯透射的光的波长的间隔排列。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

    PHOTODIODE
    5.
    发明申请
    PHOTODIODE 有权
    光电

    公开(公告)号：US20100013040A1

    公开(公告)日：2010-01-21

    申请号：US12518729

    申请日：2007-12-13

    申请人： Daisuke Okamoto ,  Junichi FuJikata ,  Kenichi Nishi ,  Keishi Ohashi

    发明人： Daisuke Okamoto ,  Junichi FuJikata ,  Kenichi Nishi ,  Keishi Ohashi

    IPC分类号： H01L31/0232

    CPC分类号： H01L31/1085 ,  H01L31/022408 ,  H01L31/02325

    摘要： A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

    摘要翻译： 光电二极管包括：包括对入射光透明的半导体的上间隔层; 金属周期结构，设置在上间隔层上并且布置成诱导表面等离子体激元，金属周期结构包括第一和第二电极，包括交替设置在上间隔层上的部分; 形成在所述上间隔层下方并且具有折射率高于所述上间隔层的折射率的半导体的光吸收层; 以及形成在光吸收层下面并且具有比光吸收层的折射率小的折射率的下间隔层。 第一和第二电极中的每一个与上间隔层形成肖特基势垒结。