公开(公告)号：US08625193B2

公开(公告)日：2014-01-07

申请号：US13121528

申请日：2009-07-30

申请人： Kenichi Nishi

发明人： Kenichi Nishi

IPC分类号： H01S5/30

CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/1053 ,  H01S5/22 ,  H01S5/3412

摘要： The present invention is an optical semiconductor device including a lower clad layer 12 having a first conduction type, an active layer 14 that is provided on the lower clad layer 12 and has multiple quantum dot layers 51-55 having multiple quantum dots 41, and an upper clad layer 18 that is provided on the active layer 14 and has a second conduction type opposite to the first conduction type, the multiple quantum dot layers 51-55 having different quantum dot densities.

摘要翻译： 本发明是一种光半导体器件，其包括具有第一导电类型的下包层12，在下包层12上设置的具有多个量子点41的多个量子点层51-55的有源层14和 上覆盖层18设置在有源层14上并且具有与第一导电类型相反的第二导电类型，多个量子点层51-55具有不同的量子点密度。

公开(公告)号：US20110012221A1

公开(公告)日：2011-01-20

申请号：US12919638

申请日：2009-03-09

申请人： Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

发明人： Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

IPC分类号： H01L31/105

CPC分类号： H01L31/105 ,  G02B6/12004 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03529 ,  Y02E10/547

摘要： The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith.

摘要翻译： Ge层与Si层之间的晶格失配大至4％左右。 因此，当Ge层在Si层上生长时，引入穿透位错以在p-i-n结处引起漏电流。 因此，光检测灵敏度降低，并且元件的可靠性也降低。 此外，在与Si波导的连接中，还存在由于Si和Ge之间的折射率的差异以及由金属电极引起的吸收损耗的反射损耗的问题。 为了解决所述问题，根据本发明，提供了一种垂直型pin-SiGe光电二极管，其具有嵌入到形成在Si层的一部分中的凹槽中的结构，其中p型或n- 在沟槽的下部形成有型掺杂层，其中在通过层叠i-Si层和SiGe缓冲层而形成的层叠结构上形成具有矩形或倒锥形的i-SiGe层 凹槽的下部和侧壁。 此外，在具有Si波导的光学连接部中，通过由i-Si层和SiGe缓冲层构成的层叠结构实现阻抗匹配，并且将上部金属层与其分离，使得多Si桥结构 用于将上部金属层电连接到其上。

公开(公告)号：US20100119192A1

公开(公告)日：2010-05-13

申请号：US12598162

申请日：2008-04-30

申请人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

发明人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

IPC分类号： G02B6/12 ,  H01L31/0232

CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

摘要翻译： 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ至λ[λ：通过光波导路径芯透射的光的波长]的间隔布置。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

公开(公告)号：US20090269084A1

公开(公告)日：2009-10-29

申请号：US12067625

申请日：2006-09-26

申请人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

发明人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

IPC分类号： H04B10/06

CPC分类号： H04B10/69 ,  H03K17/785

摘要： A light receiving circuit (114) includes a light inputting circuit (113) which converts one-system optical signal to be outputted from an optical transmission path (101) to an electrical signal and inverts a potential of the electrical signal each time the optical signal is detected, and a buffer circuit (110) which amplifies the electrical signal converted by the light inputting circuit and outputs the same. According to such configuration, since one-system optical signal may be inputted to the light receiving circuit, a system circuit configuration can be avoided to be complicated.

摘要翻译： 光接收电路（114）包括光输入电路（113），其将从光传输路径（101）输出的单系统光信号转换为电信号，并且每当光信号 以及缓冲电路（110），放大由光输入电路转换的电信号并输出​​。 根据这样的结构，由于可以将单一系统光信号输入到光接收电路，所以可以避免系统电路结构复杂化。

公开(公告)号：US08467637B2

公开(公告)日：2013-06-18

申请号：US12598162

申请日：2008-04-30

申请人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

发明人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

IPC分类号： G02B6/12 ,  G02B6/26 ,  H01L29/47

CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

摘要翻译： 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ到λλ通过光波导路径芯透射的光的波长的间隔排列。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

公开(公告)号：US08023832B2

公开(公告)日：2011-09-20

申请号：US12067625

申请日：2006-09-26

申请人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

发明人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

IPC分类号： H04B10/06

CPC分类号： H04B10/69 ,  H03K17/785

摘要： A light receiving circuit (114) includes a light inputting circuit (113) which converts one-system optical signal to be outputted from an optical transmission path (101) to an electrical signal and inverts a potential of the electrical signal each time the optical signal is detected, and a buffer circuit (110) which amplifies the electrical signal converted by the light inputting circuit and outputs the same. According to such configuration, since one-system optical signal may be inputted to the light receiving circuit, a system circuit configuration can be avoided to be complicated.

摘要翻译： 光接收电路（114）包括光输入电路（113），其将从光传输路径（101）输出的单系统光信号转换为电信号，并且每当光信号 以及缓冲电路（110），放大由光输入电路转换的电信号并输出​​。 根据这样的结构，由于可以将单一系统光信号输入到光接收电路，所以可以避免系统电路结构复杂化。

公开(公告)号：US20110002582A1

公开(公告)日：2011-01-06

申请号：US12919461

申请日：2009-02-10

申请人： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

发明人： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

IPC分类号： G02B6/12 ,  H01L21/02

CPC分类号： H01L25/0657 ,  H01L23/48 ,  H01L23/645 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L25/167 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/41 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.

摘要翻译： 提供一种半导体光互连装置，其能够在层叠半导体芯片之间的层叠半导体芯片之间传输信号，其结构是通过层叠了通过结合到光互连芯片而被高度功能化的半导体芯片。 半导体光互连装置包括半导体芯片1和光互连芯片2.光互连芯片2包括形成在其上的光学元件（例如，光敏元件，发光元件或光调制器），其具有 功能与光和电之间的信号转换有关。 半导体芯片1包括以非接触方式传输信号的传输部分3（例如，线圈或电感器）以及与光学元件电连接的连接部分4（例如，凸块）。

公开(公告)号：US20100200941A1

公开(公告)日：2010-08-12

申请号：US12519701

申请日：2007-11-28

申请人： Junichi Fujikata ,  Daisuke Okamoto ,  Kikuo Makita ,  Kenichi Nishi ,  Keishi Ohashi

发明人： Junichi Fujikata ,  Daisuke Okamoto ,  Kikuo Makita ,  Kenichi Nishi ,  Keishi Ohashi

IPC分类号： H01L31/0232 ,  H01L31/0264 ,  H01L31/108 ,  H01L31/105

CPC分类号： H01L31/1085 ,  B82Y20/00 ,  G02B6/1226 ,  H01L31/0224 ,  H01L31/105

摘要： Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The photodiode is so constituted that a light can be incident on the back side of the semiconductor layer, and that a periodic structure, in which a light incident from the back side of the semiconductor layer causes a surface plasmon resonance, is made around the Schottky junction of the photodiode.

摘要翻译： 旨在提供一种器件结构，这使得光接收灵敏度和光电二极管的高速度兼容。 还提供了在半导体层的表面上形成有导电层的肖特基势垒型光电二极管。 光电二极管构成为能够入射到半导体层的背侧，并且在肖特基（Schottky）周围形成从半导体层的背面入射的光引起表面等离子体共振的周期性结构 光电二极管的结。

公开(公告)号：US20100013040A1

公开(公告)日：2010-01-21

申请号：US12518729

申请日：2007-12-13

申请人： Daisuke Okamoto ,  Junichi FuJikata ,  Kenichi Nishi ,  Keishi Ohashi

发明人： Daisuke Okamoto ,  Junichi FuJikata ,  Kenichi Nishi ,  Keishi Ohashi

IPC分类号： H01L31/0232

CPC分类号： H01L31/1085 ,  H01L31/022408 ,  H01L31/02325

摘要： A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

摘要翻译： 光电二极管包括：包括对入射光透明的半导体的上间隔层; 金属周期结构，设置在上间隔层上并且布置成诱导表面等离子体激元，金属周期结构包括第一和第二电极，包括交替设置在上间隔层上的部分; 形成在所述上间隔层下方并且具有折射率高于所述上间隔层的折射率的半导体的光吸收层; 以及形成在光吸收层下面并且具有比光吸收层的折射率小的折射率的下间隔层。 第一和第二电极中的每一个与上间隔层形成肖特基势垒结。

公开(公告)号：US20080261268A1

公开(公告)日：2008-10-23

申请号：US11883306

申请日：2006-01-26

申请人： Kenichi Nishi ,  Satohiro Yanagisawa ,  Hirokazu Nanba ,  Makoto Ueda ,  Naoto Noro

发明人： Kenichi Nishi ,  Satohiro Yanagisawa ,  Hirokazu Nanba ,  Makoto Ueda ,  Naoto Noro

IPC分类号： C12P21/04 ,  C12N9/90 ,  C12N15/11 ,  C12P17/10 ,  C12P13/04 ,  C12N15/00 ,  C12N1/20

CPC分类号： C12P13/04 ,  C12N9/90 ,  C12P41/009

摘要： Disclosed are a novel hydantoin racemase and a process for producing an optically active N-carbamylamino acid or an optically active amino acid using the hydantoin racemase. A novel hydantoin racemase isolated and purified from Bacillus sp. Strain KNK519HR; a gene encoding the hydantoin racemase; a recombinant plasmid having the gene introduced therein; a transformant having the hydantoin racemase gene introduced therein; and a process for producing an optically active N-carbamylamino acid or an optically active amino acid characterized in that a 5-substituted hydantoin compound is treated in the presence of hydantoinase and N-carbamylamino acid amidohydrolase as well as the hydantoin racemase.

摘要翻译： 公开了一种新型乙内酰脲消旋酶和使用乙内酰脲消旋酶制备光学活性N-氨基甲酰基氨基酸或光学活性氨基酸的方法。 从芽孢杆菌分离和纯化的新型乙内酰脲消化酶 菌株KNK519HR; 编码乙内酰脲消化酶的基因; 具有引入其中的基因的重组质粒; 其中引入了乙内酰脲消化酶基因的转化体; 以及用于制备光学活性N-氨基甲酰基氨基酸或光学活性氨基酸的方法，其特征在于在乙内酰脲酶和N-氨基甲酰基氨基酸酰胺水解酶以及乙内酰脲消旋酶的存在下处理5-取代的乙内酰脲化合物。