发明申请
- 专利标题: NOVEL HIGH-K METAL GATE CMOS PATTERNING METHOD
- 专利标题(中): 新型高K金属栅CMOS图案方法
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申请号: US12536629申请日: 2009-08-06
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公开(公告)号: US20100048013A1公开(公告)日: 2010-02-25
- 发明人: Kong-Beng Thei , Harry Chuang , Ryan Chia-Jen Chen , Su-Chen Lai , Yi-Shien Mor , Yi-Hsing Chen , Gary Shen , Y. C. Lin
- 申请人: Kong-Beng Thei , Harry Chuang , Ryan Chia-Jen Chen , Su-Chen Lai , Yi-Shien Mor , Yi-Hsing Chen , Gary Shen , Y. C. Lin
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L21/28
- IPC分类号: H01L21/28
摘要:
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first active region and a second active region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a first metal layer over the capping layer, the first metal layer having a first work function, forming a mask layer over the first metal layer in the first active region, removing the first metal layer and at least a portion of the capping layer in the second active region using the mask layer, and forming a second metal layer over the partially removed capping layer in the second active region, the second metal layer having a second work function.
公开/授权文献
- US08349680B2 High-k metal gate CMOS patterning method 公开/授权日:2013-01-08